TITLE

Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation

AUTHOR(S)
Baribeau, J.-M.; Lockwood, D. J.; Syme, R. W. G.
PUB. DATE
August 1996
SOURCE
Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1450
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the interface morphology and strain in silicon/germanium atomic layer superlattices grown by molecular beam epitaxy through high-resolution x-ray diffraction and low-angle x-ray reflectometry. Experimental details; Effect of growth temperature and wafer misorientation; Discussion and result of the study.
ACCESSION #
7658690

 

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