Temperature dependence of the biaxial modulus, intrinsic stress and composition of plasma deposited silicon oxynitride films

Harding, David R.; Ogbuji, Linus U. T.; Freeman, Mathieu J.
August 1995
Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1673
Academic Journal
Investigates the biaxial stress and biaxial modulus of silicon oxynitride films as deposited and after annealing above the deposition temperature. Transformation from silicon oxynitride to silica; Overview of the deposit of silicon oxynitride films in a parallel-plate plasma-enhanced chemical-vapor deposition apparatus; Behavior of the biaxial modulus and intrinsic stress of annealed silicon oxynitride films.


Related Articles

  • Structural studies of low-temperature low-pressure chemical deposited polycrystalline silicon. Meakin, D.; Stoemenos, J.; Migliorato, P.; Economou, N. A. // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5031 

    Presents information on a study which examined structural experiments performed on silicon films formed by chemical-vapor deposition on silicon dioxide films using silane under pressures below 150 mTorr and temperatures below 640 degrees Centigrade. Methodology of the study; Results and...

  • Effect of ion energy on the optical and structural properties of SiO2 grown by plasma-enhanced chemical-vapor deposition. Durandet, A.; McKenzie, D. R. // Journal of Applied Physics;10/15/1996, Vol. 80 Issue 8, p4707 

    Presents information on a study that investigated the optical and structural SiO[sub2] films as a function of the energy of the ion bombardment applied during plasma-enhanced chemical-vapor deposition. Experimental procedure; Results and discussion on the study; Conclusions.

  • Excimer laser-induced chemical vapor deposition of titanium silicide. Gupta, A.; West, G. A.; Beeson, K. W. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3573 

    Presents information on a study that used a pulsed ArF excimer laser to deposit thin conductive films of titanium silicide on silicon and silicon oxide substrates. Experimental procedure; Results and discussion; Conclusions.

  • Electron-spin resonance of NO2 trapped in SiO2 thin solid films. Schwartz, Robert N.; Clark, Marion D.; Chamulitrat, Walee; Kevan, Larry // Journal of Applied Physics;5/1/1986, Vol. 59 Issue 9, p3231 

    Investigates the possible impurities of silicon oxide thin films grown by plasma-enhanced chemical vapor deposition technique. Presence of nitrite in silicon oxide thin films; Temperature sensitivity of electron-spin resonance spectra of nitrite; Incorporation of nitrite in the film during...

  • Microstructure and interfacial states of silicon dioxide film grown by low temperature remote... Park, Young-Bae; Rhee, Shi-Woo // Journal of Applied Physics;8/1/1999, Vol. 86 Issue 3, p1346 

    Discusses a study on the microstructure and interfacial states of a silicon (Si) dioxide film formed by remote plasma enhanced chemical vapor deposition with the addition of chlorine into silicon hydride-nitrogen oxide. Experimental procedure; Results and discussion; Conclusion.

  • Paramagnetic defect spin centers in low-pressure chemical-vapor-deposited silicon-dioxide films. Kamigaki, Yoshiaki; Yokogawa, Ken’etsu; Hashimoto, Takashi; Uemura, Toshio // Journal of Applied Physics;9/15/1996, Vol. 80 Issue 6, p3430 

    Focuses on a study which examined the behavior and origins of amorphous silicon-like spin centers in chemical vapor deposited silicon dioxide thin film. Information on the thin films; Methodology of the study; Results and discussion.

  • Silicon dioxide thin films prepared by chemical vapor deposition from.... Maruyama, Toshiro; Ohtani, Satoshi // Applied Physics Letters;5/23/1994, Vol. 64 Issue 21, p2800 

    Examines the properties of silicon dioxide thin films prepared by chemical vapor deposition. Source materials for obtaining the films; Use of multipurpose recording spectrometer to measure the ozone concentration; Details of the chemical stability, dynamic hardness and infrared absorption...

  • Low-temperature plasma enhanced chemical vapor deposition of SiO[sub 2]. Deshmukh, Shashank C.; Aydil, Eray S. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3185 

    Examines the conditions enhancing the chemical vapor deposition of silica thin films. Quality of films deposited in a helical resonator plasma reactor from tetraethylortosilicate and oxygen discharge; Methods used to characterize the films; Comparison of thermally grown silica with high...

  • Annealing characteristics of Si-rich SiO2 films. Nesbit, L. A. // Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p38 

    Silicon-rich SiO2 films of various compositions were deposited by atmospheric or plasma-enhanced chemical vapor deposition (CVD) techniques. These films were annealed at various temperatures between 700 and 1100 °C. The growth and crystallinity of the silicon clusters were monitored by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics