A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice

Chen, C. W.; Kim, J. W.; Silvestre, P.; Hafich, M. J.; Woods, L. M.; Robinson, G. Y.; Lile, D. L.
November 1993
Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5895
Academic Journal
Presents spectral transmission, reflection, and photocurrent absorption data obtained on gas-source molecular beam epitaxy grown in indium gallium arsenide/indium phosphide multiple quantum well and superlattice (SL) p-i-n diode structures. Description of a semiconductor superlattice; Details of the reflection modulation characteristics of a SL device; Estimate of switching energy given the capacitance of the SL structures.


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