TITLE

Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device

AUTHOR(S)
Capasso, Federico; Kiehl, Richard A.
PUB. DATE
August 1985
SOURCE
Journal of Applied Physics;8/1/1985, Vol. 58 Issue 3, p1366
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Discusses a study that proposed a negative conductance device consisting of a heterojunction bipolar transistor with a quantum well and a symmetric double barrier or a superlattice in the base region. Resonant tunneling by high-energy minority carrier injection into the quantum state rather than by application of an electric field; Considerations given to tunneling and ballistic injection; Significant potential of the functional devices.
ACCESSION #
7656794

 

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