Cross-sectional transmission electron microscope study of residual defects in BF+2 implanted (111) Si

Nieh, C. W.; Chen, L. J.
December 1987
Journal of Applied Physics;12/1/1987, Vol. 62 Issue 11, p4421
Academic Journal
Provides information on a study which discussed cross-sectional transmission electron microscope study of residual defects in BF[sup+sub2] implanted (111) silicon. Origin of the residual defects; Factors prepared for transmission electron microscope examinations; Motive for using the weak-beam dark-field technique; Considerations taken in the density of defects distributed in a band.


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