Effects of plasma and/or 193 nm excimer-laser irradiation in chemical-vapor deposition of boron films from B2H6+He

Komatsu, Shojiro; Kasamatsu, Mitsuo; Yamada, Kawakatsu; Moriyoshi, Yusuke
June 1992
Journal of Applied Physics;6/1/1992, Vol. 71 Issue 11, p5654
Academic Journal
Presents a study which examined the effects of plasma and/or excimer laser irradiation in chemical vapor deposition of boron films from boron[sub2]hydrogen[sub6]+helium. Experimental procedure; Results and discussion; Precursors predicted by modified neglect of diatomic overlap calculations.


Related Articles

  • Laser chemical vapor deposition of cobalt thin films. Schulmeister, K.; Lunney, J. G.; Buckley, B. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3480 

    Presents a study which examined area selective laser chemical vapor deposition of cobalt thin films, using excimer laser radiation and dicobalt octacarbonyl as precursor. Nature of film growth; Purity of the cobalt films based on x-ray photoelectron spectroscopy results; Details of the...

  • Deposition of high quality cubic boron nitride films on nickel substrates. Fangqing Zhang; Yongping Guo // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p971 

    Describes the preparation of the well-crystallized cubic boron nitride (c-BN) films on nickel substrates using a hot filament assisted radio frequency plasma chemical vapor deposition method. Deposition of c-BN films without hexagonal BN codeposition; Observation of (111) and (100) faces;...

  • Surface conditioning of chemical vapor deposited hexagonal boron nitride film for negative... Kian Ping Loh; Sakaguchi, Isao // Applied Physics Letters;1/4/1999, Vol. 74 Issue 1, p28 

    Studies surface conditioning of chemical vapor deposited hexagonal boron nitride film for negative electron affinity. Resistance of the film to oxygen plasma or in-vacuo atomic oxygen treatment; Reexposure of the positive electron affinity surface.

  • Epitaxial growth of diamond thin films on cubic boron nitride {111} surfaces by dc plasma chemical vapor deposition. Koizumi, S.; Murakami, T.; Inuzuka, T.; Suzuki, K. // Applied Physics Letters;8/6/1990, Vol. 57 Issue 6, p563 

    Diamond thin films have been grown epitaxially on high-pressure synthesized cubic boron nitride (c-BN) particles by using dc plasma chemical vapor deposition. At the early growth stage of the film on c-BN{111} surfaces, the island structure is observed and the number density of islands is about...

  • Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition. Ahmad, Ahmad A.; Ianno, N. J.; Snyder, P. G.; Welipitiya, D.; Byun, D.; Dowben, P. A. // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8643 

    Provides information on a study that determined the optical constants of plasma-enhanced chemical-vapor deposition boron carbide thin films by spectroscopic ellipsometry and spectrophotometry. Experimental procedure; Results and discussion on the study.

  • Effect of boron doping on the crystal quality of chemical vapor deposited diamond films. Won, J.H.; Hatta, A. // Applied Physics Letters;5/13/1996, Vol. 68 Issue 20, p2822 

    Assesses the effect of boron doping on the crystal quality of chemical vapor deposited diamond films. Role of boron doping in the modification of electrical properties; Comparison between the doped and undoped diamond films; Incorporation of boron to intensify edge emission in cathodoluminescence.

  • Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition. Wang, W. L.; Polo, M. C.; Sánchez, G.; Cifre, J.; Esteve, J. // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1846 

    Presents information on a study which examined the internal stress and strain in boron-doped diamond thin films grown by microwave plasma chemical vapor deposition and hot filament chemical vapor deposition as a function of boron concentration. Background of the study; Methodology of the study;...

  • Effect of excimer laser annealing on the structural properties of silicon germanium films. Sedky, Sherif; Schroeder, Jeremy; Sands, Timothy; King, Tsu-Jae; Howe, Roger T. // Journal of Materials Research;Dec2004, Vol. 19 Issue 12, p3503 

    We investigated the use of a pulsed excimer laser having a wavelength of 248 nm, a pulse duration of 38 ns, and an average fluence between 120 and 780 mJ/cm² to locally tailor the physical properties of Si1−xGex (18% < x < 90%) films deposited by low-pressure chemical vapor deposition...

  • Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition. Tanaka, T.; Fukuda, T.; Nagasawa, Y.; Miyazaki, S.; Hirose, M. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1445 

    Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to -69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics