An electron-spin-resonance study of γ-irradiated barium galliosilicate glasses

Dutt, D. A.; Griscom, D. L.; Shaw, C. M.; Shelby, J. E.
April 1992
Journal of Chemical Physics;4/1/1992, Vol. 96 Issue 7, p4852
Academic Journal
Electron-spin-resonance spectroscopy has been used to study the structure of radiation-induced defects in a barium galliosilicate glass compositional series of BaO/Ga2O3=1.0 and 20–80 mol % SiO2. Spin-Hamiltonian parameters derived from computer line-shape simulations have been used to identify three oxygen-associated hole centers: a gallium-oxygen hole center and two variations of silicon-oxygen hole centers. Each of these defects contains an unpaired electron in a nonbonding oxygen p orbital. The compositional dependence of the ESR data is consistent with a gradual change from a Ga-based tetrahedral network to a Si-based tetrahedral network as the silica content is increased.


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