Inversion criteria for the metal-insulator-semiconductor tunnel structures

Wang, S. J.; Fang, B. C.; Tzeng, F. C.; Chen, C. T.; Chang, C. Y.
August 1986
Journal of Applied Physics;8/1/1986, Vol. 60 Issue 3, p1080
Academic Journal
Focuses on a study which examined the conditions of strong surface inversion in the semiconductor surface of a metal-insulator-semiconductor tunnel structure. Theoretical background; Computation results and discussion; Critical oxide thickness; Conclusions.


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