Characterization of Si-SiO2 interface traps in p-metal-oxide-semiconductor structures with thin oxides by conductance technique

Hung, K. K.; Cheng, Y. C.
November 1987
Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4204
Academic Journal
Presents a study which aimed to characterize the silicon-silica interface traps in p-metal-oxide-semiconductor structures with very thin gate oxides by conductance and quasistatic techniques. Review of the theory of the conductance technique; Description of the hole capture cross section; Discussion on dispersion parameters as a function of the surface potential.


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