TITLE

Characterization of Si-SiO2 interface traps in p-metal-oxide-semiconductor structures with thin oxides by conductance technique

AUTHOR(S)
Hung, K. K.; Cheng, Y. C.
PUB. DATE
November 1987
SOURCE
Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4204
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which aimed to characterize the silicon-silica interface traps in p-metal-oxide-semiconductor structures with very thin gate oxides by conductance and quasistatic techniques. Review of the theory of the conductance technique; Description of the hole capture cross section; Discussion on dispersion parameters as a function of the surface potential.
ACCESSION #
7654557

 

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