The effect of various buffer-layer structures on the material quality and dislocation density of high composition AlxGa1-xAs laser material grown by metalorganic chemical vapor deposition

Givens, M. E.; Coleman, J. J.; Zmudzinski, C. A.; Bryan, R. P.; Emanuel, M. A.; Miller, L. M.
May 1988
Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5092
Academic Journal
Provides information on a study which examined the effect of the buffer-layer structures on the generation and propagation of dislocations in epitaxial layers of high composition aluminum[subx]gallium[sub1--x]arsenic through chemical vapor deposition. Experimental procedure; Results and discussion; Conclusions.


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