Low threshold 1.3-μm InGaAsP/InP lasers prepared by a single-step liquid-phase epitaxy

Liu, Y. Z.; Wang, C. C.; Chu, M.
March 1988
Journal of Applied Physics;3/15/1988, Vol. 63 Issue 6, p2151
Academic Journal
Presents information on a study which described an approach based on the properties of liquid phase epitaxy to form low threshold laser structures. Groups of indium gallium arsenide phosphorus/indium phosphide lasers; Examination of the threshold dependence of the lasers.


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