TITLE

An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates

AUTHOR(S)
Guha, S.; Madhukar, A.
PUB. DATE
June 1993
SOURCE
Journal of Applied Physics;6/15/1993, Vol. 73 Issue 12, p8662
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Explains the interfacet migration behavior observed in molecular beam epitaxical growth of GaAs and AlGaAs substrates on the basis of the nature of the ledge-ledge interaction. Introduction to epitaxical growth of semiconductors on patterned substrates; Analysis of the evolution of the facets using the cross-sectional transmission electron microscope; Behavior of the interfacet migration.
ACCESSION #
7653960

 

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