TITLE

Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxy

AUTHOR(S)
Stolz, W.; Guimaraes, F. E. G.; Ploog, K.
PUB. DATE
January 1988
SOURCE
Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p492
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the optical and structural properties of gallium arsenide (GaAs) grown on (100) silicon (Si) by molecular-beam epitaxy. Challenges in the integration of Si- and GaAs-based circuits on the same Si wafer; Methodology of the study; Discussion on the results of the study.
ACCESSION #
7653717

 

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