TITLE

Uniformity of an embedded stripe large optical-cavity GaAs/GaAlAs double-heterostructure laser grown by metallo-organic chemical vapor deposition

AUTHOR(S)
Fekete, D.
PUB. DATE
February 1986
SOURCE
Journal of Applied Physics;2/15/1986, Vol. 59 Issue 4, p1028
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents information on a study which described the uniformity of optical-cavity gallium-arsenic/gallium-aluminum-arsenic double heterostructure stripe geometry laser grown by metallo-organic chemical vapor deposition. Applications of transverse-mode diode lasers; Conclusions.
ACCESSION #
7653606

 

Related Articles

  • Graded-index separate confinement heterostructure InGaN laser diodes. Stanczyk, S.; Czyszanowski, T.; Kafar, A.; Goss, J.; Grzanka, S.; Grzanka, E.; Czernecki, R.; Bojarska, A.; Targowski, G.; Leszczynski, M.; Suski, T.; Kucharski, R.; Perlin, P. // Applied Physics Letters;Dec2013, Vol. 103 Issue 26, p261107 

    We demonstrate graded-index-separate-confinement-heterostructure InGaN laser diodes (GRINSCH) grown by metal organic vapor phase epitaxy. In this type of structure, the optical mode is confined close to the active region by cladding layers with linearly changing Al content. The virtue of this...

  • Properties of Wide-Mesastripe InGaAsP/InP Lasers. Golikova, E. G.; Kureshov, V. A.; Leshko, A. Yu.; Lyutetskii, A. V.; Pikhtin, N. A.; Ryaboshtan, Yu. A.; Skrynnikov, G. A.; Tarasov, I. S.; Alferov, Zh. I. // Semiconductors;Jul2000, Vol. 34 Issue 7, p853 

    Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3-1.5 �m were grown by metalorganic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range...

  • High power, AlGaAs buried heterostructure lasers with flared waveguides. Welch, D. F.; Cross, P. S.; Scifres, D. R.; Streifer, W.; Burnham, R. D. // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p233 

    High power, buried heterostructure laser with flared waveguide horns have been grown by a two-step metalorganic chemical vapor deposition process. Powers up to 120 mW cw in a single longitudinal and transverse mode have been obtained from a single stripe laser. The flared waveguides decrease the...

  • Dark-line observations in failed quantum well lasers. Waters, R. G.; Bertaska, R. K. // Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1347 

    The electron-beam-induced current technique has been used to disclose dark-line patterns in degraded AlxGa1-xAs quantum well lasers. At least four distinct types of pattern exist, each being characteristic of a particular device structure.

  • Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050-1070 nm). Shashkin, I.; Vinokurov, D.; Lyutetskiy, A.; Nikolaev, D.; Pikhtin, N.; Rudova, N.; Sokolova, Z.; Slipchenko, S.; Stankevich, A.; Shamakhov, V.; Veselov, D.; Bakhvalov, K.; Tarasov, I. // Semiconductors;Sep2012, Vol. 46 Issue 9, p1211 

    The temperature dependences of the threshold current density and threshold concentration in semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with an extended waveguide have been studied (wavelengths λ = 1050-1070). It is shown that the temperature...

  • High-power laser diodes (λ = 808—850 nm) based on asymmetric separate-confinement heterostructures. Andreev, A. Yu.; Leshko, A. Yu.; Lyutetskiĭ, A. V.; Marmalyuk, A. A.; Nalyot, T. A.; Padalitsa, A. A.; Pikhtin, N. A.; Sabitov, D. R.; Simakov, V. A.; Slipchenko, S. O.; Khomylev, M. A.; Tarasov, I. S. // Semiconductors;May2006, Vol. 40 Issue 5, p611 

    Symmetric and asymmetric separate-confinement AlGaAs/GaAs heterostructures have been grown by MOCVD in accordance with the concept of design of high-power semiconductor lasers. High-power laser diodes with a 100-µm aperture, emitting in the 808–850-nm range, were fabricated from these...

  • Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm. Shamakhov, V.; Nikolaev, D.; Lyutetskiy, A.; Bakhvalov, K.; Rastegaeva, M.; Slipchenko, S.; Pikhtin, N.; Tarasov, I. // Semiconductors;Mar2014, Vol. 48 Issue 3, p373 

    Two types of laser heterostructures, i.e., those without internal mechanical stress compensation, with AlGaAs-alloy emitter and waveguide layers (type 1), and laser heterostructures with stress compensation, with AlGaAsP emitter and waveguide layers (type 2) are grown by metal-organic chemical...

  • A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD. Vinokurov, D. A.; Konyaev, V. P.; Ladugin, M. A.; Lyutetskiy, A. V.; Marmalyuk, A. A.; Padalitsa, A. A.; Petrunov, A. N.; Pikhtin, N. A.; Simakov, V. A.; Slipchenko, S. O.; Sukharev, A. V.; Fetisova, N. V.; Shamakhov, V. V.; Tarasov, I. S. // Semiconductors;Feb2010, Vol. 44 Issue 2, p238 

    Design parameters of epitaxially stacked tunnel-junction asymmetric separate-confinement laser heterostructures are chosen. Technological modes for fabrication of heterostructures of this kind by metal-organic chemical vapor deposition in the system of AlGaAs/GaAs/InGaAs solid solutions are...

  • Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide. Vinokurov, D. A.; Vasilyeva, V. V.; Kapitonov, V. A.; Lyutetskiy, A. V.; Nikolaev, D. N.; Pikhtin, N. A.; Slipchenko, S. O.; Stankevich, A. L.; Shamakhov, V. V.; Fetisova, N. V.; Tarasov, I. S. // Semiconductors;Feb2010, Vol. 44 Issue 2, p233 

    The effect of the active region thickness on the basic characteristics of high-power semiconductor lasers based on AlGaAs/GaAs/InGaAs asymmetric separate-confinement heterostructures grown by MOCVD epitaxy has been studied. It is shown that the threshold current, temperature sensitivity of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics