TITLE

Characterization of sputtered yttria-stabilized zirconia thin film and its application to a metal-insulator-semiconductor structure

AUTHOR(S)
Miyahara, Yuji
PUB. DATE
March 1992
SOURCE
Journal of Applied Physics;3/1/1992, Vol. 71 Issue 5, p2309
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the characterization of sputtered yttria-stabilized zirconia (YSZ) thin film and its application to a metal-insulator-semiconductor structure. Background to the study; Experimental procedures; Structure of the YSZ film; Electrical characteristics of the YSZ film; Conclusion.
ACCESSION #
7652565

 

Related Articles

  • THz time-domain spectroscopy of high Tc substrates. Grischkowsky, D.; Keiding, So\ren // Applied Physics Letters;9/3/1990, Vol. 57 Issue 10, p1055 

    Using the method of time-domain spectroscopy, we have measured the absorption and dispersion from 0.2 to 2 THz of the high Tc substrates, magnesium oxide, yttria-stabilized zirconia (YSZ), and lanthanum aluminate. Our measurements on YSZ and LaAlO3 at both room temperature and 85 K show...

  • Heteroepitaxial growth of Y2O3 films on silicon. Fukumoto, Hirofumi; Imura, Takeshi; Osaka, Yukio // Applied Physics Letters;7/24/1989, Vol. 55 Issue 4, p360 

    Yttria (Y2 O3 ) films have been grown on Si (100) and Si (111) substrates heated at 800 °C by vacuum evaporation. X-ray diffraction and reflection high-energy electron diffraction observations reveal the heteroepitaxial growth of Y2 O3 films on Si (100) and Si (111) substrates. The (111)...

  • Subsurface segregation of yttria in yttria stabilized zirconia. de Ridder, M.; van Welzenis, R. G.; van der Gon, A. W. Denier; Brongersma, H. H.; Wulff, S.; Chu, W.-F.; Weppner, W. // Journal of Applied Physics;9/15/2002, Vol. 92 Issue 6, p3056 

    The segregation behavior in 3 and 10 mol % polycrystalline yttria stabilized zirconia (YSZ), calcined at temperatures ranging from 300 to 1600°C, is characterized using low-energy ion scattering (LEIS). In order to be able to separate the Y and Zr LEIS signals, YSZ samples have been prepared...

  • Oblique ion texturing of yttria-stabilized zirconia: the {211}<111> structure. Berdahl, Paul; Reade, Ronald P.; Liu, Jinping; Russo, Richard E.; Fritzemeier, Les; Buczek, David; Schoop, Urs // Applied Physics Letters;1/20/2003, Vol. 82 Issue 3, p343 

    Amorphous (Zr,Y)O[SUBx] films were synthesized by reactive magnetron sputtering and subsequently crystallized by oblique ion bombardment. Crystalline texture nucleated by the ion beam was replicated by solid-phase epitaxial growth throughout the formerly amorphous yttria-stabilized zirconia...

  • The forming process in resistive-memory elements based on metal-insulator-semiconductor structures. Tikhov, S.; Gorshkov, O.; Antonov, I.; Kasatkin, A.; Koryazhkina, M. // Technical Physics Letters;Oct2014, Vol. 40 Issue 10, p837 

    Using as an example metal-insulator-semiconductor structures based on GaAs with stabilized (by yttrium oxide) zirconium dioxide, which show the effect of resistive-switching random-access memory, the possibility is considered of controlling phenomena associated with the forming process in the...

  • Ionic Wiedemann-Franz law. Scott, J. F.; Scott, J.F.; Bohn, H. G.; Bohn, H.G.; Schenk, W. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    The Wiedemann-Franz law for electron transport in metals was historically a linch pin for the free-electron theory of metals; it states that, at moderately low temperatures, the ratio of thermal conductivity K to electrical conductivity σ is proportional to absolute temperature, with a...

  • Laser-stimulated luminescence of yttria-stabilized cubic zirconia crystals. Petrik, N.G.; Taylor, D.P. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6770 

    Presents information on a study which investigated the kinetics of laser-stimulated luminescence of yttria-stabilized cubic zirconia single crystals. Experimental details; Results and discussion; Conclusions.

  • Epitaxial growth of yttria-stabilised zirconia buffer layers on X-cut LiNbO[sub 3] for superconducting electrodes. Sánchez, F.; García-Cuenca, M.V.; Ferrater, C.; Varela, M. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 3, p381 

    We report on the epitaxial growth of yttria-stabilised zirconia (YSZ) buffer layers on X-cut LiNbO[sub 3] (LNO) single crystals by pulsed laser deposition. Despite the low chemical stability of the substrates at high temperature, high quality fully reproducible films were obtained over a...

  • Electrical characteristics of metal-insulator-semiconductor diodes with ZrO2/SiO2 dielectric films. Fukumoto, Hirofumi; Morita, Mizuho; Osaka, Yukio // Journal of Applied Physics;6/15/1989, Vol. 65 Issue 12, p5210 

    Presents a study which examined the electrical characteristics of metal-insulator-semiconductor diodes with zirconium dioxide/silicon dioxide dielectric films. Methods; Results; Discussion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics