Laser-induced etching of InP using two laser frequencies simultaneously

Grebel, H.; Pien, P.
March 1992
Journal of Applied Physics;3/1/1992, Vol. 71 Issue 5, p2428
Academic Journal
Presents a study that used lasers to simultaneously etched sinusoidal gratings in InP surfaces employing a thin-film cell configuration under external biasing. Background of laser-induced etching; Experiment conducted; Discussion.


Related Articles

  • Anomalous local laser etching of copper by chlorine. Hua Tang; Herman, Irving P. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2164 

    Investigates the laser etching of copper by chlorine. Use of a scanning continuous wave laser; Characterization of copper etching by a kinetic model; Effect of the nondesorbed copper chloride layer formation on the rate of copper chlorination; Relation between copper etch depth and scan rate.

  • Fiber Bragg gratings with enhanced thermal stability. Brambilla, Gilberto; Rutt, Harvey // Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3259 

    Gratings written in tin-doped silica fibers by using a 248 nm excimer laser exhibit extremely high thermal stability. Isothermal measurements up to 1100 K demonstrate significant advantages over conventional fiber gratings. Extrapolations from experimental data indicated that gratings operating...

  • Characteristics of a two-component chemically-assisted ion-beam etching technique for.... Sah, R.E.; Ralston, J.D. // Applied Physics Letters;8/14/1995, Vol. 67 Issue 7, p927 

    Characterizes the two-component chemically-assisted ion-beam etching technique for dry-etching of high-speed multiple quantum well laser mirrors. Effect on several constraints; Use in the fabrication of short cavity high-speed lasers; Demonstration of record direct modulation bandwidths by...

  • Electrostatic collection of debris resulting from 193 nm laser etching of polyimide. von Gutfeld, R. J.; Srinivasan, R. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p15 

    Ablated debris produced by 193 nm laser irradiation of polyimide can be preferentially collected on charged wire or plate electrodes placed on the polymer surface. Scanning micrographs indicate several types of debris structure depending on laser fluence and applied potential. The fragment...

  • 1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen. Matsui, Teruhito; Ohtsuka, Ken-ichi; Sugimoto, Hiroshi; Abe, Yuji; Ohishi, Toshiyuki // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1641 

    A 1.5 μm GaInAsP/InP buried-heterostructure laser diode was fabricated by reactive ion etching using a mixture of ethane and hydrogen for the formation of mesa stripe. Blocking layers were regrown on the dry etched wafers by liquid phase epitaxy. Continuous-wave operation was obtained at room...

  • Ion mass effect in plasma-induced charging. Hwang, Gyeong S.; Giapis, Konstantinos P. // Applied Physics Letters;10/6/1997, Vol. 71 Issue 14, p1942 

    Investigates the ion mass effect influencing charging during etching in high-density laser plasmas. Effects of lighter ions addition to high-density plasmas; Information on the low energy component of the ion energy distribution function of lighter ions; Impact of reducing the radio frequency...

  • Photoelectrochemical etching of n-InP in a thin-film cell. Grebel, H.; Iskandar, B.; Sheppard, K. G. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2655 

    The laser-induced photoelectrochemical etching of n-InP using a thin-film cell has been studied. A minimum in the reaction time was found as a function of etchant concentration for a given laser intensity. External potential biasing enhanced the reaction only for relatively low etchant...

  • Deep ultraviolet laser etching of vias in polyimide films. Treyz, G. V.; Scarmozzino, R.; Osgood, R. M. // Applied Physics Letters;7/24/1989, Vol. 55 Issue 4, p346 

    A deep ultraviolet cw laser has been used to form vias in a polyimide film. The etched features have smooth sidewalls and high aspect ratios. The observations are consistent with an etching mechanism based on thermal decomposition.

  • In situ fabrication of InP-based optical waveguides by excimer laser projection. Matz, R.; Heydel, R.; Gopel, W. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1137 

    Describes the in situ fabrication of indium-phosphide-based optical waveguides by excimer laser projection etching. Details on the basis of the process; Factor influencing the comparison between the optical attenuation of laser-etched waveguides and conventionally etched guides; Design of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics