TITLE

Deep-level photoluminescence studies on Si-doped, metalorganic chemical vapor deposition grown AlxGa1-xAs

AUTHOR(S)
Visser, E. P.; Tang, X.; Wieleman, R. W.; Giling, L. J.
PUB. DATE
March 1991
SOURCE
Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3266
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study that performed a deep-level photoluminescence (PL) on silicon-doped, metal organic chemical vapor deposition grown Al[subx]Ga[sub1-x]As as a function of the growth parameters. Novel PL emissions for Al[subx]Ga[sub1-x]As that was recorded; Factors to which the systematic analysis of the growth conditions of the emissions were attributed to; Behavior of the broad PL emission as a function of the growth parameters.
ACCESSION #
7652226

 

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