Correlation between structural, optical, and electrical properties of GaAs grown on (001) Si

Alberts, V.; Neethling, J. H.; Leitch, A. W.
June 1994
Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7258
Academic Journal
Characterizes undoped gallium arsenide films grown by organometallic vapor phase epitaxy on silicon substrates using transmission electron microscopy, photoluminescence spectroscopy (PL) and electrochemical capacitance-voltage measurements. Methods that have been proposed to both decrease the defect density and to suppress those present in a region close to the heterointerface; Source materials in a hydrogen carrier gas flow; Comparison of the PL data obtained from the different layers.


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