TITLE

Correlation between structural, optical, and electrical properties of GaAs grown on (001) Si

AUTHOR(S)
Alberts, V.; Neethling, J. H.; Leitch, A. W.
PUB. DATE
June 1994
SOURCE
Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7258
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Characterizes undoped gallium arsenide films grown by organometallic vapor phase epitaxy on silicon substrates using transmission electron microscopy, photoluminescence spectroscopy (PL) and electrochemical capacitance-voltage measurements. Methods that have been proposed to both decrease the defect density and to suppress those present in a region close to the heterointerface; Source materials in a hydrogen carrier gas flow; Comparison of the PL data obtained from the different layers.
ACCESSION #
7651954

 

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