The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

Rogers, W. Boyd; Massoud, Hisham Z.; Fair, Richard B.; Gösele, Ulrich M.; Tan, Teh Y.; Rozgonyi, George A.
June 1989
Journal of Applied Physics;6/1/1989, Vol. 65 Issue 11, p4215
Academic Journal
Presents a study which examined the retardation phenomenon of oxygen precipitation in Czochralski silicon and the growth of surface stacking faults under a silicon nitride capping layer. Importance of the thermal history of the silicon material in determining the amount of oxygen; Method used in determining the oxygen content of the samples; Mechanisms responsible for oxygen precipitation retardation.


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