TITLE

Strained GaAs layers grown on GaAs substrates with an intermediate GaAs1-xPx buffer layer

AUTHOR(S)
Strobl, G.; Freundlich, A.; Grenet, J. C.; Teissere, M.; Neu, G.
PUB. DATE
July 1991
SOURCE
Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p198
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which examined the possibility of growing strained gallium arsenide (GaAs) layers on GaAs substrates using a GaAs[sub1-x]phosphorus[subx] buffer layers. Method of the study; Results and discussion; Conclusion.
ACCESSION #
7651171

 

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