Strained GaAs layers grown on GaAs substrates with an intermediate GaAs1-xPx buffer layer

Strobl, G.; Freundlich, A.; Grenet, J. C.; Teissere, M.; Neu, G.
July 1991
Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p198
Academic Journal
Presents a study which examined the possibility of growing strained gallium arsenide (GaAs) layers on GaAs substrates using a GaAs[sub1-x]phosphorus[subx] buffer layers. Method of the study; Results and discussion; Conclusion.


Related Articles

  • X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers. Olsen, J. A.; Hu, E. L.; Lee, S. R.; Fritz, I. J.; Howard, A. J.; Hammons, B. E.; Tsao, J. Y. // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3578 

    Presents a study which examined the extent of relaxation and orientation of linearly graded In[subx]Al[sub1-x]As buffers grown on gallium arsenide using a novel x-ray diffraction reciprocal-space mapping technique. Theoretical background; Description of the experimental setup; Results.

  • Epitaxial MgO on GaAs(111) as a buffer layer for z-cut epitaxial. Fork, D.K.; Anderson, G.B. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1029 

    Demonstrates the epitaxial magnesium oxide on gallium arsenide (111) as a buffer layer for z-cut epitaxial lithium niobate. Implications of in-plane epitaxial relationships for lithium niobate boundaries; Usefulness of the epitaxial system for monolithic electro-optic applications; Indication...

  • Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge. Chia, C. K.; Dalapati, G. K.; Chai, Y.; Lu, S. L.; He, W.; Dong, J. R.; Seng, D. H. L.; Hui, H. K.; Wong, A. S. W.; Lau, A. J. Y.; Cheng, Y. B.; Chi, D. Z.; Zhu, Z.; Yeo, Y. C.; Xu, Z.; Yoon, S. F. // Journal of Applied Physics;Mar2011, Vol. 109 Issue 6, p066106 

    The material and optical properties of the GaAs/AlxGa1-xAs/Ge structures grown by metalorganic chemical vapor deposition were examined and found to be dependent of the Al content x. SIMS and PL measurements show that the 10 nm AlxGa1-xAs buffer layer with x = 0.3 and 0.6 are equally effective in...

  • Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001). Guo, W.; Date, L.; Pena, V.; Bao, X.; Merckling, C.; Waldron, N.; Collaert, N.; Caymax, M.; Sanchez, E.; Vancoille, E.; Barla, K.; Thean, A.; Eyben, P.; Vandervorst, W. // Applied Physics Letters;8/11/2014, Vol. 105 Issue 6, p1 

    High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNiTM pre-epi clean and two-step growth procedure (low temperature buffer...

  • A GeSi-Buffer Structure for Growth of High-Quality GaAs Epitaxial Layers on a Si Substrate. Chang, Edward Y.; Tsung-Hsi Yang; Guangli Luo; Chun-Yen Chang // Journal of Electronic Materials;Jan2005, Vol. 34 Issue 1, p23 

    A SiGe-buffer structure for growth of high-quality GaAs layers on a Si (100) substrate is proposed. For the growth of this SiGe-buffer structure, a 0.8-µm Si0.1 Ge0.9 layer was first grown. Because of the large mismatch between this layer and the Si substrate, many dislocations formed near...

  • Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure. Gocalinska, A.; Manganaro, M.; Pelucchi, E. // Applied Physics Letters;4/9/2012, Vol. 100 Issue 15, p152112 

    A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its...

  • The effect of substrate orientation on the properties of low temperature molecular beam epitaxial... O'Hagan, S.; Missous, M. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2400 

    Focuses on the results of comparative studies of low temperature growth of gallium arsenide on (100) substrates and on (111)A, (111)B, (311)A, and (311)B surfaces. Reduction of excess As incorporation into layers; Lattice parameter and lower absorption in the near-band-edge; Electrical...

  • Electromodulation reflectance of low temperature grown GaAs. Hsu, T.M.; Sung, J.W.; Lee, W. C. // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2603 

    Studies low temperature grown gallium arsenide by electromodulation reflectance spectroscopy. Reflectance spectra; Arsenic antisite defects; Absence of a signal for a rich defect sample.

  • Hole mobilities and the effective Hall factor in p-type GaAs. Wenzel, M.; Irmer, G. // Journal of Applied Physics;6/15/1997, Vol. 81 Issue 12, p7810 

    Presents evidences proving effective Hall factor in p-type gallium arsenide as larger than values reported. Theoretical drift and theoretical Hall mobilities as functions of temperature; Theoretical Hall factors in the heavy and light hole bands; Strong dependence of the Hall mobility on Hall...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics