TITLE

Interband transitions in molecular-beam-epitaxial AlxGa1-xAs/GaAs

AUTHOR(S)
Aubel, J. L.; Reddy, U. K.; Sundaram, S.; Beard, W. T.; Comas, James
PUB. DATE
July 1985
SOURCE
Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p495
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the interband transition energies in aluminum[subx]gallium[sub1]_[subx]arsenic layers grown by molecular-beam epitaxy techniques. Experimental details; Results of the study; Discussion of findings.
ACCESSION #
7651028

 

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