TITLE

Mass spectrometric transient study of dc plasma etching of Si in CF4 and CF4/O2 mixtures

AUTHOR(S)
Brandt, W. W.; Honda, T.
PUB. DATE
January 1985
SOURCE
Journal of Applied Physics;1/1/85, Vol. 57 Issue 1, p119
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Carries out the direct current plasma experiments on polycrystalline silicon wafers using californium (CF)[sub4] and CF[sub4]/oxygen mixtures as etchants. Rate of oxygen absorption; Effect on the etching rate when oxygen pulses are injected simultaneously with CF[sub4] pulses; Removal of oxide or chemisorbed layers by argon sputtering and CF[sub4] etching under the experimental conditions.
ACCESSION #
7650665

Tags: POLYCRYSTALS;  CALIFORNIUM;  ETCHING reagents

 

Related Articles

  • Patterning of silicon by indentation and chemical etching. Rao, R.; Bradby, J. E.; Williams, J. S. // Applied Physics Letters;9/17/2007, Vol. 91 Issue 12, p123113 

    An array of features on Si (100) is fabricated by a new maskless pattering process involving a combination of indentation and anisotropic wet chemical etching. Indentation is carried out in order to induce transformation to the high-pressure phases, Si III and Si XII, before etching in a KOH...

  • Applied unveils remote plasma etcher system.  // Electronic News (10616624);7/10/95, Vol. 41 Issue 2073, p102 

    Comments on Applied Materials' introduction of an etch system with what it called the remote plasma source (RPS) for solving problems associated with wet etch systems used for many isotropic etch procedures. Its suitability for devices with 0.5 micron features and below; How it extends...

  • Formation of optoelectronic structures based on InAsSb/InAsSbP solid solutions. Grebenshchikova, E. A.; Litvak, A. M.; Sherstnev, V. V.; Yakovlev, Yu. P. // Technical Physics Letters;Aug98, Vol. 24 Issue 8, p593 

    An etchant having the composition HCl/CrO[sub 3]/HF/H[sub 2]O is proposed for fabricating optoelectronic devices (lasers, light-emitting diodes, and photodiodes) based on InAs solid solutions for the 3 - 5 �m spectral range. It is shown that the proposed etchant ensures isotropic rates of...

  • Catalyzed gaseous etching of silicon. Selamoglu, Nur; Mucha, John A.; Flamm, Daniel L.; Ibbotson, Dale E. // Journal of Applied Physics;8/1/87, Vol. 62 Issue 3, p1049 

    Presents the traces of copper and silver to accelerate the etching of silicon by molecular fluorine. Examples of enhancement of silicon etching; Arrhenius plot of silicon etch rate with and without copper present; Effect of etchant gas and metal contaminant on silicon etching.

  • Improved aqueous etchant for high T[sub c] superconductor materials. Ashby, Carol I.H.; Martens, Jon // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2147 

    Develops an aqueous etchant for high temperature superconductor materials. Factors responsible for the increase in surface resistance; Cause of the reduction of surface-resistance degradation; Selection of etching times for surface resistant measurements.

  • Etchants for ancient iron implements. Piaskowski, Jerzy; Radzikowska, Janina // Advanced Materials & Processes;Feb2001, Vol. 159 Issue 2, p45 

    Focuses on the microstructure of ancient and medieval iron implements. Klemm's I color etchant and its component; Analysis of the microstructures of ancient iron implements, including Damascus steel blades, Japanese swords and bloomery iron.

  • High efficiency chemical etchant for the formation of luminescent porous silicon. Kelly, Michael T.; Chun, Jonathan K.M. // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1693 

    Describes a chemical etchant for the formation of a porous silicon. Comparison of the photoluminescent intensity between hydrofluoric acid (HF) solutions with ion NO[sup +] and nitric acid/HF based stain etches; Improvement of the etch induction time; Identification of NO[sup +] as the active...

  • Di- and Tricarboxylic-acid-based etches for processing high temperature superconducting thin films. Ginley, D.S.; Ashby, C.I.H.; Plut, T.A.; Urea, D.; Siegal, M.P.; Martens, J.S. // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2429 

    Presents a class of chelating etches for processing yttrium-barium-copper and thallium-barium-calcium-cobalt high temperature superconductors. Implications for the fabrication of high-frequency devices; Increase in microwave surface resistance; Applications of the etch technology.

  • Common Etchants for Irons and Steels. Bramfitt, Bruce L.; Benscoter, Arlan O. // Advanced Materials & Processes;Jun2002, Vol. 160 Issue 6, p42 

    Presents a tabular representation of common etchants for irons and steels. Etchants for revealing macrostructures in iron and steel; Identification of phases and constituents in ferrous materials.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics