TITLE

Transparent and conductive impurity-doped GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method

AUTHOR(S)
Sato, Hirotoshi; Minami, Tadatsugu; Yamada, Eiji; Ishii, Makoto; Takata, Shinzo
PUB. DATE
February 1994
SOURCE
Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1405
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study that reported the preparation of transparent conducting gallium nitride thin films doped with oxygen, silicon, or titanium on glass substrates by the metalorganic chemical vapor deposition method utilizing electron cyclotron resonance plasma. Details of the experiment; Results and discussion; Conclusion.
ACCESSION #
7650625

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics