Excimer laser photolysis study of NH3 and SO2 mixtures at 193 nm

Ikeda, Tetsuya; Danno, Minoru; Makihara, Hiroshi
October 1989
Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3404
Academic Journal
Presents a study that examined photolysis in the NH[sub3]-SO[sub2] system by using argon fluoride excimer laser. Construction of the photolysis cell; Expression for the photolysis of the mixtures due to the argon fluoride excimer laser radiation; Reaction which takes place indicated by the decomposition of silicon oxide due to the NH[sub3] photolysis.


Related Articles

  • State-selective detection of CO using a tunable ArF excimer laser. Meijer, Gerard; Wodtke, Alec M.; Voges, Heiner; Schlüter, Harald; Andresen, Peter // Journal of Chemical Physics;8/15/1988, Vol. 89 Issue 4, p2588 

    CO molecules in their electronic and vibrational ground state were state selectively detected using a tunable ArF excimer laser. Rotational state selectivity is due to the one-photon resonance of the spin-forbidden a 3Π, v’=2←X 1∑+,v‘=0 transition. Subsequent...

  • Ar[sub 2] excimer emission from a laser-heated plasma in a high-pressure argon gas. Takahashi, A.; Okada, T.; Hiyama, T.; Maeda, M.; Uchino, K.; Nohdomi, R.; Mizoguchi, H. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    We investigated a pump scheme to establish a practical Ar[sub 2] excimer laser operating at 128 nm. In this scheme, electrons generated by preionization of Ar gas at high pressure were heated by intense pulsed CO[sub 2] laser radiation. The resultant high-density plasma in the high-pressure Ar...

  • Photon-controlled fabrication of amorphous superlattice structures using ArF (193 nm) excimer laser photolysis. Lowndes, D. H.; Geohegan, D. B.; Eres, D.; Pennycook, S. J.; Mashburn, D. N.; Jellison, G. E. // Applied Physics Letters;5/30/1988, Vol. 52 Issue 22, p1868 

    Pulsed ArF (193 nm) excimer laser photolysis of disilane, germane, and disilane-ammonia mixtures has been used to deposit amorphous superlattices containing silicon, germanium, and silicon nitride layers. Transmission electron microscope cross-section views demonstrate that structures having...

  • ArF laser excited in a capacitively coupled discharge tube. de la Rosa, J.; Eichler, H. J.; Herweg, H. // Journal of Applied Physics;8/1/1988, Vol. 64 Issue 3, p1598 

    Presents a study which obtained lasing in argon fluoride laser using a longitudinal capacitively coupled high-voltage discharge. Wavelength of the laser energy obtained; Information on excimer lasers with capillary discharge excitation; Experimental set-up for the argon fluoride laser.

  • Time-resolved optical emission during laser ablation of Cu, CuO, and high-Tc superconductors: Bi1.7Sr1.3Ca2Cu3Ox and Y1Ba1.7Cu2.7Oy. Saenger, K. L. // Journal of Applied Physics;11/1/1989, Vol. 66 Issue 9, p4435 

    Reports the time-resolved measurements of optical emission from the ablation plume of argon fluoride excimer laser-irradiated Cu, CuO, Bi[sub1.7]Sr[sub1.3]Ca[sub2]Cu[sub3]O[subx], and Y[sub1]Ba[sub1.7]Cu[sub2.7]O[suby]. Occurrence of radiation trapping; Emphasis on fast species; Laser fluence...

  • Rotational state distribution of CO photofragments from triplet ketene. Bitto, Herbert; Chen, I-Chia; Moore, C. Bradley // Journal of Chemical Physics;11/1/1986, Vol. 85 Issue 9, p5101 

    The nascent rotational state distribution of CO(v‘=0,J‘) following excimer laser photolysis of ketene at 351 nm has been determined under collisionless conditions in a flow cell. At this low excitation energy dissociation can only take place on the triplet potential surface leading...

  • Photochemistry in phosphorus-doped silica glass by ArF excimer laser irradiation: Crucial effect of H[sub 2] loading. Hosono, Hideo; Kajihara, Koichi; Hirano, Masahiro; Oto, Masanori // Journal of Applied Physics;4/1/2002, Vol. 91 Issue 7, p4121 

    A striking difference in photochemistry induced by ArF excimer laser irradiation was found between H[sub 2]-unloaded and H[sub 2]-loaded P-doped SiO[sub 2] glasses. Although a pair of phosphorus-electron center and phosphorus-oxygen-hole center (POHC) were produced in the former, PHO[sub 2]...

  • Activation energy and spectroscopy of the growth of germanium films by ultraviolet laser-assisted chemical vapor deposition. Osmundsen, J. F.; Abele, C. C.; Eden, J. G. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2921 

    Presents a study which examined the activation energy and spectroscopy of the growth of germanium (Ge) films by ultraviolet laser-assisted chemical vapor deposition. Analysis of the spatially and temporally resolved emission profiles for the GeH and atomic Ge photofragments; Description of...

  • Ion implantation-induced strong photosensitivity in high-purity fused silica: Correlation of.... Verhaegen, M.; Brebner, J.L. // Applied Physics Letters;5/27/1996, Vol. 68 Issue 22, p3084 

    Examines the optical changes induced by argon fluoride excimer laser light illumination of high purity SiO[sub 2] implanted with Si[sup +2] at a fluence of 10[sup 15] ions/cm[sup 2]. Measurement of optical absorption; Appearance of bleaching behavior; Significance of the Kramers-Kronig for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics