An electron paramagnetic resonance study of Er3+ in Bi4Ge3O12 single crystals

Bravo, D.; López, F. J.
October 1993
Journal of Chemical Physics;10/1/1993, Vol. 99 Issue 7, p4952
Academic Journal
The X-band electron paramagnetic resonance study of Er-doped Bi4Ge3O12 single crystals at 5 K is reported. The spectra have been attributed to Er3+ ions in the Bi3+ site, confirming the assumed trigonal site symmetry of Er3+ in previous crystal-field analysis. A detailed study of the measured g-factor values indicates that corrections to the existing crystal-field parameters Bnm should be performed. It is suggested that corrections to the sixth-rank parameters are particularly important, in agreement with spin-correlated crystal-field (SCCF) effects for Er3+.


Related Articles

  • Electron-spin resonance in single crystals of YBa2Cu3O7-x and Bi4/3Pb2/3Sr2CaCu2O8+x. Karim, R.; Seed, R.; How, H.; Widom, A.; Vittoria, C.; Balestrino, G.; Paroli, P. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p5064 

    Presents information on a study which examined the electron-spin resonance in single crystals of YBa[sub2]Cu[sub3]O[sub7-x] and Bi[sub4/3]Pb[sub2/3]Sr[sub2]CaCu[sub2]O[sub8+x]. Measurement of the single-crystal platelets; Experimental details; Results and discussion; Conclusions.

  • Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28. Weis, C. D.; Lo, C. C.; Lang, V.; Tyryshkin, A. M.; George, R. E.; Yu, K. M.; Bokor, J.; Lyon, S. A.; Morton, J. J. L.; Schenkel, T. // Applied Physics Letters;4/23/2012, Vol. 100 Issue 17, p172104 

    We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal...

  • Defect control for polarization switching in Bi2WO6-based single crystals. Noguchi, Yuji; Murata, Koichiro; Miyayama, Masaru // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p242916 

    The authors have investigated the leakage current mechanism and polarization properties of Bi2WO6 single crystals along the a axis at 25 °C. High-pressure oxygen annealing led to a decrease in leakage current, showing that electron is a detrimental carrier of the leakage current property. It...

  • Effect of Grain Size on Charge and Magnetic Ordering in Bi0.67Ca0.33MnO3. Ade, Ramesh; Singh, R. // AIP Conference Proceedings;2014, Vol. 1591, p1529 

    In the present work we report the electron spin resonance(ESR) and magnetic measurements to understand the effect of grain size on the charge ordering (CO), orbital ordering (OO), long range anti ferromagnetic (AFM) ordering in Bi0.67Ca0.33MnO3 manganite synthesized by sol-gel method. The...

  • Electron spin resonance and magnetization studies of sol-gel synthesized Bi0.4Ca0.6MnO3. Ade, Ramesh; Kurian, Joji; Vijayan, D.; Singh, R. // AIP Conference Proceedings;6/5/2012, Vol. 1447 Issue 1, p1143 

    The synthesis of single phase sample of Bi0.4Ca0.6MnO3 (BCMO) system was done by sol-gel technique. The Electron Spin Resonance (ESR) and magnetization measurements were carried out to estimate the charge ordering temperature TCO and Neel temperature TN. The magnetic phase for T>TCO is dominated...

  • The effect of Bi doping on ESR of La0.7-xBixCa0.3MnO3. Vijayan, D.; Kurian, Joji; Singh, R. // AIP Conference Proceedings;6/5/2012, Vol. 1447 Issue 1, p1191 

    The temperature (T) dependent Electron spin resonance (ESR) study was carried out on La0.7-xBixCa0.3MnO3 (x = 0, 0.035, 0.07, and 0.35) samples prepared by sol-gel method. The reduction in the paramagnetic to ferromagnetic (PM-FM) transition temperature (TC) was observed for x = 0.35 sample. ESR...

  • Force-detected magnetic resonance in a field gradient of 250 000 Tesla per meter. Bruland, K. J.; Dougherty, W. M.; Garbini, J. L.; Sidles, J. A.; Chao, S. H. // Applied Physics Letters;11/23/1998, Vol. 73 Issue 21 

    We report the detection of slice-selective electron spin resonance with an external magnetic field gradient comparable to local interatomic gradients, using the techniques of magnetic resonance force microscopy. An applied microwave field modulated the spin-gradient force between a paramagnetic...

  • Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides. Warren, W. L.; Lenahan, P. M. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1296 

    We find that two paramagnetic ‘‘trivalent silicon’’ centers appear to be responsible for damage resulting from Fowler–Nordheim injection of electrons into thermal oxides on silicon.

  • Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films. Carlos, W. E. // Applied Physics Letters;5/18/1987, Vol. 50 Issue 20, p1450 

    Electron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer. The 29Si central hyperfine...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics