A new band system of nitrogen: Observation of the N2(G 3Δg→W 3Δu) transition

Bachmann, R.; Ottinger, Ch.; Vilesov, A. F.
September 1993
Journal of Chemical Physics;9/1/1993, Vol. 99 Issue 5, p3262
Academic Journal
The first experimental observation of the N2(G 3Δg→W 3Δu) transition is reported on here. The emission forms part of the spectrum of the so-called N2 beam afterglow, a spontaneous luminescence emitted by a molecular beam of N2 issuing from an intense d.c. discharge. Using a high performance charge-coupled device (CCD) optical multichannel detector, 18 bands of a new band system were observed with 2 Å full width at half-maximum (FWHM) resolution in the 350–650 nm region. Three well-resolved v‘ progressions were analyzed. From a comparison with the known vibrational spacings in the N2(G) and N2(W) states, they could be assigned unambiguously to the N2(G→W) transition. This observation allows the energy of the N2(G) state to be determined as Te=89 505 cm-1 or 11.10 eV, thereby also fixing the location of the previously observed H(3[uppercase_phi_synonym]u) state at Te=107 328 cm-1 or 13.31 eV.


Related Articles

  • Nitrogen related vacancies in GaAs based quantum well superlattices. Slotte, J.; Saarinen, K.; Pavelescu, E.-M.; Hakkarainen, T.; Pessa, M. // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p061903 

    The authors report on the influence of nitrogen incorporation on vacancies in GaAs based superlattices. The samples were molecular beam epitaxy grown on p-type GaAs substrates with the superlattice structure consisting of ten periods of quantum well material separated by GaAs buffers. Three...

  • Effect of group V/III flux ratio on deep electron traps in AlxGa1-xAs (x=0.7) grown by molecular beam epitaxy. Hayakawa, T.; Kondo, M.; Suyama, T.; Takahashi, K.; Yamamoto, S.; Yano, S.; Hijikata, T. // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p788 

    The effect of group V/III flux ratio γ on deep electron traps in AlxGa1-xAs (x=0.7) grown by molecular beam epitaxy at 720 °C has been studied by deep level transient spectroscopy. The photoluminescence characteristics of a GaAs single quantum well sandwiched by Al0.7Ga0.3As are determined...

  • Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy. Smith, M.; Chen, G.D. // Applied Physics Letters;6/19/1995, Vol. 66 Issue 25, p3474 

    Investigates the dynamics of a band-edge transition in gallium nitride grown by molecular beam epitaxy. Utilization of time-resolved photoluminescence spectroscopy in the study; Measurement of the band-edge transition; Derivation of the transition recombination lifetimes.

  • FIRST PRINCIPLES STUDIES OF THE STRUCTURAL AND ELECTRONIC PROPERTIES OF Sc0.5In0.5N. Pérez, W. López; Rodríguez Martínez, Jairo Arbey; Moreno-Armenta, M.; Tan, Noboru Takeuchi // Revista Colombiana de Física;2006, Vol. 38 Issue 3, p1070 

    We have studied the structural and electronic properties of Sc0.5In0.5N in sodium chloride and wurtzite structures using first-principles total energy calculations. Wurtzite is the calculated ground state structure with lattice constant a=3.53 Ã… and bulk modulus B0=127.73 GPa. There is an...

  • Inverted-V chirped phased arrays of gain-guided GaAs/GaAlAs diode lasers. Kapon, E.; Lindsey, C. P.; Smith, J. S.; Margalit, S.; Yariv, A. // Applied Physics Letters;1984, Vol. 45 Issue 12, p1257 

    Inverted-V chirped arrays of multiple quantum well GaAs/GaAlAs lasers were grown by molecular beam epitaxy. These arrays consisted of seven gain-guided lasers whose stripe widths decreased, from the central laser to the outermost ones, symmetrically. This structure makes it possible to...

  • Temperature Dependence of the Photoluminescence Linewidth of In0.2Ga0.8As Quantum Wells on GaAs(311) Substrates. Rojas-Ramírez, J. S.; Goldhahn, R.; Moser, P.; Huerta-Ruelas, J.; Hernández-Rosas, J.; López-López, M. // AIP Conference Proceedings;11/12/2008, Vol. 1077 Issue 1, p234 

    We have studied the photoluminescence (PL) properties of strained In0.2Ga0.8As/GaAs quantum well (QW) structures grown by molecular beam epitaxy on (311)-oriented substrates. Special attention has been paid to the PL linewidth measurements in terms of the full width at half maximum (FWHM). We...

  • Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy. Helman, A.; Tchernycheva, M.; Lusson, A.; Warde, E.; Julien, F.H.; Moumanis, Kh.; Fishman, G.; Monroy, E.; Daudin, B.; Le Si Dang, D.; Bellet-Amalric, E.; Jalabert, D. // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5196 

    We report experimental and theoretical results on interband and intersubband transitions in GaN quantum wells with strained AlN barriers. All of the samples are grown by molecular-beam epitaxy on sapphire (0001) substrates. The results show that even at room temperature, strong electron...

  • Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides. Oye, Michael M.; Wistey, Mark A.; Reifsnider, Jason M.; Agarwal, Sumit; Mattord, Terry J.; Govindaraju, Sridhar; Hallock, Gary A.; Holmes, Archie L.; Bank, Seth R.; Yuen, Homan B.; Harris, James S. // Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221902 

    We studied the effects of ion damage on the optical properties of dilute nitrides grown by plasma-assisted molecular-beam epitaxy. A dual-grid retarding field ion energy analyzer was used to measure the ion flux and ion energy distribution at the substrate position from an Applied-EPI...

  • Structural investigation of GaAs1-xBix/GaAs multiquantum wells. Tominaga, Yoriko; Kinoshita, Yusuke; Oe, Kunishige; Yoshimoto, Masahiro // Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131915 

    GaAs1-xBix/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has been confirmed by cross-sectional transmission microscopy and high-resolution x-ray diffraction measurements. Photoluminescence...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics