TITLE

A new band system of nitrogen: Observation of the N2(G 3Δg→W 3Δu) transition

AUTHOR(S)
Bachmann, R.; Ottinger, Ch.; Vilesov, A. F.
PUB. DATE
September 1993
SOURCE
Journal of Chemical Physics;9/1/1993, Vol. 99 Issue 5, p3262
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The first experimental observation of the N2(G 3Δg→W 3Δu) transition is reported on here. The emission forms part of the spectrum of the so-called N2 beam afterglow, a spontaneous luminescence emitted by a molecular beam of N2 issuing from an intense d.c. discharge. Using a high performance charge-coupled device (CCD) optical multichannel detector, 18 bands of a new band system were observed with 2 Å full width at half-maximum (FWHM) resolution in the 350–650 nm region. Three well-resolved v‘ progressions were analyzed. From a comparison with the known vibrational spacings in the N2(G) and N2(W) states, they could be assigned unambiguously to the N2(G→W) transition. This observation allows the energy of the N2(G) state to be determined as Te=89 505 cm-1 or 11.10 eV, thereby also fixing the location of the previously observed H(3[uppercase_phi_synonym]u) state at Te=107 328 cm-1 or 13.31 eV.
ACCESSION #
7647056

 

Related Articles

  • Nitrogen related vacancies in GaAs based quantum well superlattices. Slotte, J.; Saarinen, K.; Pavelescu, E.-M.; Hakkarainen, T.; Pessa, M. // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p061903 

    The authors report on the influence of nitrogen incorporation on vacancies in GaAs based superlattices. The samples were molecular beam epitaxy grown on p-type GaAs substrates with the superlattice structure consisting of ten periods of quantum well material separated by GaAs buffers. Three...

  • Effect of group V/III flux ratio on deep electron traps in AlxGa1-xAs (x=0.7) grown by molecular beam epitaxy. Hayakawa, T.; Kondo, M.; Suyama, T.; Takahashi, K.; Yamamoto, S.; Yano, S.; Hijikata, T. // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p788 

    The effect of group V/III flux ratio γ on deep electron traps in AlxGa1-xAs (x=0.7) grown by molecular beam epitaxy at 720 °C has been studied by deep level transient spectroscopy. The photoluminescence characteristics of a GaAs single quantum well sandwiched by Al0.7Ga0.3As are determined...

  • Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy. Smith, M.; Chen, G.D. // Applied Physics Letters;6/19/1995, Vol. 66 Issue 25, p3474 

    Investigates the dynamics of a band-edge transition in gallium nitride grown by molecular beam epitaxy. Utilization of time-resolved photoluminescence spectroscopy in the study; Measurement of the band-edge transition; Derivation of the transition recombination lifetimes.

  • FIRST PRINCIPLES STUDIES OF THE STRUCTURAL AND ELECTRONIC PROPERTIES OF Sc0.5In0.5N. Pérez, W. López; Rodríguez Martínez, Jairo Arbey; Moreno-Armenta, M.; Tan, Noboru Takeuchi // Revista Colombiana de Física;2006, Vol. 38 Issue 3, p1070 

    We have studied the structural and electronic properties of Sc0.5In0.5N in sodium chloride and wurtzite structures using first-principles total energy calculations. Wurtzite is the calculated ground state structure with lattice constant a=3.53 Ã… and bulk modulus B0=127.73 GPa. There is an...

  • Inverted-V chirped phased arrays of gain-guided GaAs/GaAlAs diode lasers. Kapon, E.; Lindsey, C. P.; Smith, J. S.; Margalit, S.; Yariv, A. // Applied Physics Letters;1984, Vol. 45 Issue 12, p1257 

    Inverted-V chirped arrays of multiple quantum well GaAs/GaAlAs lasers were grown by molecular beam epitaxy. These arrays consisted of seven gain-guided lasers whose stripe widths decreased, from the central laser to the outermost ones, symmetrically. This structure makes it possible to...

  • Temperature Dependence of the Photoluminescence Linewidth of In0.2Ga0.8As Quantum Wells on GaAs(311) Substrates. Rojas-Ramírez, J. S.; Goldhahn, R.; Moser, P.; Huerta-Ruelas, J.; Hernández-Rosas, J.; López-López, M. // AIP Conference Proceedings;11/12/2008, Vol. 1077 Issue 1, p234 

    We have studied the photoluminescence (PL) properties of strained In0.2Ga0.8As/GaAs quantum well (QW) structures grown by molecular beam epitaxy on (311)-oriented substrates. Special attention has been paid to the PL linewidth measurements in terms of the full width at half maximum (FWHM). We...

  • Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy. Helman, A.; Tchernycheva, M.; Lusson, A.; Warde, E.; Julien, F.H.; Moumanis, Kh.; Fishman, G.; Monroy, E.; Daudin, B.; Le Si Dang, D.; Bellet-Amalric, E.; Jalabert, D. // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5196 

    We report experimental and theoretical results on interband and intersubband transitions in GaN quantum wells with strained AlN barriers. All of the samples are grown by molecular-beam epitaxy on sapphire (0001) substrates. The results show that even at room temperature, strong electron...

  • Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides. Oye, Michael M.; Wistey, Mark A.; Reifsnider, Jason M.; Agarwal, Sumit; Mattord, Terry J.; Govindaraju, Sridhar; Hallock, Gary A.; Holmes, Archie L.; Bank, Seth R.; Yuen, Homan B.; Harris, James S. // Applied Physics Letters;5/30/2005, Vol. 86 Issue 22, p221902 

    We studied the effects of ion damage on the optical properties of dilute nitrides grown by plasma-assisted molecular-beam epitaxy. A dual-grid retarding field ion energy analyzer was used to measure the ion flux and ion energy distribution at the substrate position from an Applied-EPI...

  • Structural investigation of GaAs1-xBix/GaAs multiquantum wells. Tominaga, Yoriko; Kinoshita, Yusuke; Oe, Kunishige; Yoshimoto, Masahiro // Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131915 

    GaAs1-xBix/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has been confirmed by cross-sectional transmission microscopy and high-resolution x-ray diffraction measurements. Photoluminescence...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics