TITLE

Undoped semi-insulating GaAs grown by a vertical Bridgman method: Electrical property analysis using a simple ambipolar correction

AUTHOR(S)
Tang, R.-S.; Blakemore, J. S.; Kremer, R. E.; Burke, K. M.
PUB. DATE
December 1989
SOURCE
Journal of Applied Physics;12/1/1989, Vol. 66 Issue 11, p5428
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which described for numerical correction of conductivity and Hall-effect data in a gallium arsenide (GaAs) sample. Description of ambipolar data and its correction; Application of vertical Bridgman-grown undoped semi-insulating GaAs samples.
ACCESSION #
7643748

 

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