TITLE

Selective growth and optical properties of an AlGaAs layer on V-grooved Si substrates

AUTHOR(S)
Hashimoto, A.; Fukunaga, T.; Watanabe, N.
PUB. DATE
December 1989
SOURCE
Journal of Applied Physics;12/1/1989, Vol. 66 Issue 11, p5536
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which examined selective growth and optical properties of gallium arsenide and Al[subx]Ga[sub1-x]As layers on V-grooved silicon substrates by low-pressure metalorganic vapor-phase epitaxy. Methods used in the growth of the layers; Measurement of the Auger electron spectroscopic measurements; Properties of the crystal growth; Result of microscopic photoluminescence and Raman scattering investigation on grown layers.
ACCESSION #
7643671

 

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