TITLE

Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy

AUTHOR(S)
Sheldon, P.; Yacobi, B. G.; Jones, K. M.; Dunlavy, D. J.
PUB. DATE
December 1985
SOURCE
Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4186
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which examined growth and characterization of gallium arsenide/germanium epilayers grown on silicon substrates by molecular beam epitaxy. Method of the study; Results and discussion; Conclusion.
ACCESSION #
7643099

 

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