TITLE

High-purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layer

AUTHOR(S)
Hayakawa, T.; Suyama, T.; Kondo, M.; Takahashi, K.; Yamamoto, S.; Yano, S.; Hijikata, T.
PUB. DATE
December 1985
SOURCE
Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4452
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which investigated high-purity aluminum gallium arsenide grown by molecular beam epitaxy using a superlattice buffer layer. Method of the study; Results and discussion; Conclusion.
ACCESSION #
7642930

 

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