TITLE

Homojunction diode of CuInSe2 thin film fabricated by nitrogen implantation

AUTHOR(S)
Nishitani, M.; Negami, T.; Kohiki, S.; Terauchi, M.; Wada, T.; Hirao, T.
PUB. DATE
August 1993
SOURCE
Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p2067
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on the fabrication of rectifying homojunction in polycrystalline copper indium selenide thin film. Overview of the ion implantation of nitrogen; Properties of the near surface region of the films; Measurement of the photovoltaic characteristics of a homojunction.
ACCESSION #
7642175

 

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