TITLE

Schottky barrier of epitaxial (100)CoGa on GaAs

AUTHOR(S)
Kuo, T. C.; Arghavani, R.; Wang, K. L.
PUB. DATE
August 1992
SOURCE
Journal of Applied Physics;8/1/1992, Vol. 72 Issue 3, p1191
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study that examined Schottky barrier heights in the epitaxial gallium arsenide diodes using internal photoemission methods. Importance of metal/semiconductor interface in ohmic and Schottky contacts; Cross section transmission electron microscopy image of cobalt-gallium/gallium arsenide interface; Equations used in the thermionic emission current.
ACCESSION #
7641770

 

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