Investigations of dynamical changes in metal/silicon and ion-implanted silicon thin films by cross-sectional transmission electron microscopy with intermittent annealings in N2 ambient

Lu, S. W.; Nieh, C. W.; Chen, L. J.
August 1987
Journal of Applied Physics;8/1/1987, Vol. 62 Issue 3, p1117
Academic Journal
Demonstrates the feasibility of studying dynamical changes in metal/silicon and ion-implanted silicon thin films by cross-sectional transmission electron microscopy (XTEM) with intermittent annealings in N[sub2] ambient. Deposition of nickel thin films onto silicon substrates; Method used to examine XTEM specimens; Dislocations originally located in the region near the silicon surface that was consumed during NiSi[sub2] growth.


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