TITLE

Investigations of dynamical changes in metal/silicon and ion-implanted silicon thin films by cross-sectional transmission electron microscopy with intermittent annealings in N2 ambient

AUTHOR(S)
Lu, S. W.; Nieh, C. W.; Chen, L. J.
PUB. DATE
August 1987
SOURCE
Journal of Applied Physics;8/1/1987, Vol. 62 Issue 3, p1117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the feasibility of studying dynamical changes in metal/silicon and ion-implanted silicon thin films by cross-sectional transmission electron microscopy (XTEM) with intermittent annealings in N[sub2] ambient. Deposition of nickel thin films onto silicon substrates; Method used to examine XTEM specimens; Dislocations originally located in the region near the silicon surface that was consumed during NiSi[sub2] growth.
ACCESSION #
7641533

 

Related Articles

  • Thin-film interactions in Si/SiO2/W-Ti/Al-1% Si system. Chang, Peng-Heng; Liu, Hung-Yu; Keenan, J. A.; Anthony, J. M.; Bohlman, J. G. // Journal of Applied Physics;9/15/1987, Vol. 62 Issue 6, p2485 

    Provides information on a study which investigated the thin-film metal-metal interactions in a silicon compound system using transmission electron microscopy, glancing angle x-ray diffraction, Rutherford backscattering spectrometry. Methods; Results; Discussion.

  • Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II. Epitaxial quality. Garverick, L. M.; Comfort, J. H.; Yew, T. R.; Reif, R.; Baiocchi, F. A.; Luftman, H. S. // Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3398 

    Part II. Focuses on the optimization of argon-ion bombardment as a method to clean silicon substrates prior to epitaxial deposition at low temperatures. Effect of a damaged substrate on the stages of film nucleation; Use of transmission electron microscopy and defect etching; Basis of the...

  • Properties of reactively sputtered W—B—N thin film as a diffusion barrier for Cu metallization on Si. Leu, L.; Norton, D.; McElwee-White, L.; Anderson, T. // Applied Physics A: Materials Science & Processing;Mar2009, Vol. 94 Issue 3, p691 

    Thin films of W–B–N (10 nm) have been evaluated as diffusion barriers for Cu interconnects. The amorphous W–B–N thin films were prepared at room temperature via reactive magnetron sputtering using a W2B target at various N2/(Ar + N2) flow ratios. Cu diffusion tests...

  • Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering. Valcheva, E.; Birch, J.; Persson, P. O. Å.; Tungasmita, S.; Hultman, L. // Journal of Applied Physics;12/15/2006, Vol. 100 Issue 12, p123514 

    Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to...

  • Transmission electron microscope study of the initial stage of formation of Pd2Si and Pt2Si. Aboelfotoh, M. O.; Alessandrini, A.; d’Heurle, F. M. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1242 

    Transmission electron microscopy of the compounds formed from the reaction between amorphous Si and thin (0.5–20 nm) layers of Pd and Pt reveals the early formation of crystalline silicides. The presence of phase in an amorphous state prior to crystallization is not observed. These...

  • A study of the growth of Lu2O3 on Si(001) by synchrotron radiation photoemission and transmission electron microscopy. Malvestuto, M.; Pedio, M.; Nannarone, S.; Pavia, G.; Scarel, G.; Fanciulli, M.; Boscherini, F. // Journal of Applied Physics;4/1/2007, Vol. 101 Issue 7, p074104 

    Rare-earth oxides are among the materials which are presently studied as possible replacements of amorphous silicon dioxide as gate insulators in nanometric Si devices; in fact, they generally exhibit high values of the dielectric constant (“high κ”), a necessary requirement to...

  • Formation of Ordered Helium Pores in Amorphous Silicon Subjected to Low-Energy Helium Ion Irradiation. Reutov, V. F.; Sokhatskiı, A. S. // Technical Physics;Jan2003, Vol. 48 Issue 1, p68 

    Thin transparent (for transmission electron microscopy, TEM) self-supported Si(001) films are irradiated on the (110) end face by low-energy (E = 17 keV) He[SUP+] ions at doses ranging from 5 x 10[SUP16] to 4.5 x 10[SUP17] cm[SUP-2] at room temperature. The TEM study of the irradiated Si films...

  • Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy. Bellon, P.; Chevalier, J. P.; Martin, G. P.; Dupont-Nivet, E.; Thiebaut, C.; André, J. P. // Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p567 

    GaInP films grown by metalorganic vapor phase epitaxy on GaAs substrates are observed by transmission electron microscopy in cross sections. A 1/2 (111) (CuPt type) ordering is observed, for the first time in this system, with only two orientation variants occurring. A layered structure (layer...

  • Growth twins in nanocrystalline SnO2 thin films by high-resolution transmission electron microscopy. Zheng, J. G.; Pan, Xiaoqing; Schweizer, M.; Zhou, F.; Weimar, U.; Göpel, W.; Rühle, M. // Journal of Applied Physics;5/15/1996, Vol. 79 Issue 10, p7688 

    Presents a study that investigated growth twins in nanocrystalline SnO[sub2] thin films by high-resolution transmission electron microscopy. Methodology; Results; Discussion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics