TITLE

Modification of surface band bending of diamond by low energy argon and carbon ion bombardment

AUTHOR(S)
Lau, W. M.; Huang, L. J.; Bello, I.; Yiu, Y. M.; Lee, S.-T.
PUB. DATE
April 1994
SOURCE
Journal of Applied Physics;4/1/1994, Vol. 75 Issue 7, p3385
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study that investigated the effects of argon and carbon ion bombardment of p-diamond. Methodology using in situ x-ray photoelectron spectroscopy and low energy electron diffraction analysis; Details on the annealing of the bombarded surfaces; Implications for the defect formation and interaction in diamond.
ACCESSION #
7641470

 

Related Articles

  • Ion-beam-induced surface damages on tris-(8-hydroxyquinoline) aluminum. Liao, L. S.; Hung, L. S. // Applied Physics Letters;9/13/1999, Vol. 75 Issue 11, p1619 

    Studies the ion-beam-induced surface damages on tris-(8-hydroxyquinoline) aluminum using both x-ray and ultraviolet photoelectron spectroscopies (XPS and UPS). Results of XPS core level electron density curves; Valence band structure of the molecule as measured by UPS; Applications of organic...

  • The combined use of a singly charged ion beam and undulator radiation for photoelectron spectrometry studies on atomic ions. Bizau, J. M.; Cubaynes, D.; Richter, M.; Wuilleumier, F.; Obert, J.; Putaux, J. C. // Review of Scientific Instruments;Jan1992, Vol. 63 Issue 1, p1389 

    We present the first photoelectron spectrometry experiment on a singly charged ion beam. Taking advantage of the high photon flux emitted in the undulator SU6 of Super- ACO, we have measured photoelectron spectra produced in the resonant photoionization of Ca[sup +] ions at 33.2-eV photon...

  • Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment. Deng, Z. W.; Kwok, R. W. M. // Journal of Applied Physics;10/1/1999, Vol. 86 Issue 7, p3676 

    Studies the dynamical process of surface band bending induced by ion bombardment as a function of ion fluence and energy using energy ion beam system and x-ray photoelectron spectrometer. Measurement of surface band bending and Fermi level positioning; Estimation of surface charge density;...

  • Nitridation of a Si(100) surface by 100–1000 eV N+2 ion beams. Kusunoki, I.; Takaoka, T.; Igari, Y.; Ohtsuka, K. // Journal of Chemical Physics;11/1/1994, Vol. 101 Issue 9, p8238 

    The nitridation mechanism of silicon at room temperature under exposure to 100–1000 eV N+2 ion beams has been studied in situ in an ultrahigh vacuum apparatus using x-ray photoelectron spectroscopy. The increase of the nitrogen content in a surface layer as a function of the ion dose was...

  • Investigation of the mechanism of Ar+ ion-assisted Cl2 etching of GaAs{110}: Role of ion-induced charge acceptor states. DeLouise, L. A. // Journal of Applied Physics;8/1/1991, Vol. 70 Issue 3, p1718 

    Presents information on a study which investigated the argon(Ar)[sup+] ion-assisted Cl[sub2]/gallium arsenide (GaAs){110} etching reaction mechanism. Sample preparation; Results of x-ray photoelectron spectroscopy characterization; Discussion of Cl[sub2] and gallium-chloride time-of-flight...

  • In situ x-ray photoelectron spectroscopy and reflection high-energy electron diffraction study of diethylgalliumchloride adsorption on Si (100) and Si (111) surfaces. Sasaoka, C.; Kato, Y.; Usui, A.; Hirayama, H.; Tatsumi, T. // Applied Physics Letters;10/22/1990, Vol. 57 Issue 17, p1733 

    Diethylgalliumchloride (DEGaCl) adsorption on Si(100) 2×1 and Si(111) 7×7 surfaces is studied by reflection high-energy electron diffraction and x-ray photoelectron spectroscopy. DEGaCl adsorbs molecularly on the (100) surface at room temperature, while the Ga—Cl bond dissociates...

  • Ion-beam synthesis and growth mechanism of diamond-like materials. Ronning, C. // Applied Physics A: Materials Science & Processing;2003, Vol. 77 Issue 1, p39 

    Opposite to most other deposition methods, the dominating nucleation and growth mechanism during ion-beam deposition of energetic ions in the range between 10 eV and 10 keV occurs in a region of a few nanometers below the surface of the growing film. This process is called 'subplantation' �...

  • Reactive ion etching of diamond. Sandhu, G. S.; Chu, W. K. // Applied Physics Letters;7/31/1989, Vol. 55 Issue 5, p437 

    A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 �/min...

  • Absolute quantum photoyield of ion damaged diamond surfaces. Laikhtman, A.; Hoffman[a], A.; Kalish, R.; Breskin, A.; Chechik, R. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2451 

    Reports on the absolute quantum photoyield (QPY) measurements from defective diamond surfaces in the 140-200 nanometer spectral range. Examination of the effect of defects on the photoemission properties of polycrystalline diamond films by intentionally introducing damage; Degradation of the QPY...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics