Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure

Holzmann, M.; Többen, D.; Abstreiter, G.; Schäffler, F.
September 1994
Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3917
Academic Journal
Examines the size effects in field-effect induced wires imposed upon a high-mobility Si/Si[sub0.6]Ge[sub0.3] heterostructure by magnetotransport. Data on the temperature-dependent magnetoresistance of the wires and reference sample; Expression for the separation between the equipotentials at the Fermi energy.


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