TITLE

X-ray reflectometry study of interdiffusion in Si/Ge heterostructures

AUTHOR(S)
Baribeau, J.-M.
PUB. DATE
September 1993
SOURCE
Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p3805
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which investigated the interdiffusion in molecular-beam-epitaxy-grown silicon-germanium heterostructures by grazing incidence x-ray reflectometry. Details on the production of the epitaxial layers; Behavior of thick Si/Si[sub1-subx]Ge[subx] superlattices; Angular intensity modulation of the satellite intensity.
ACCESSION #
7638499

 

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