Boron-doping effects on the electrical properties of high-deposition rate amorphous silicon

Kakinuma, H.; Nishikawa, S.; Watanabe, T.; Nihei, K.
September 1985
Journal of Applied Physics;9/15/1985, Vol. 58 Issue 6, p2413
Academic Journal
Presents a study which investigated the effects of boron doping on the electrical properties of high-deposition rate amorphous silicon. Method of the study; Results and discussion; Conclusion.


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