TITLE

Boron-doping effects on the electrical properties of high-deposition rate amorphous silicon

AUTHOR(S)
Kakinuma, H.; Nishikawa, S.; Watanabe, T.; Nihei, K.
PUB. DATE
September 1985
SOURCE
Journal of Applied Physics;9/15/1985, Vol. 58 Issue 6, p2413
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study which investigated the effects of boron doping on the electrical properties of high-deposition rate amorphous silicon. Method of the study; Results and discussion; Conclusion.
ACCESSION #
7637982

 

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