TITLE

Co diffusion and precipitation in Si/SiGe heterostructures

AUTHOR(S)
Dekempeneer, E. H. A.; Zalm, P. C.; Vriezema, C. J.; van den Heuvel, R. A.
PUB. DATE
October 1991
SOURCE
Journal of Applied Physics;10/15/1991, Vol. 70 Issue 8, p4263
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study that demonstrated cobalt diffusion and precipitation in silicon/silicon germanide heterostructures. Procedures in the preparation of a sample grown by molecular-beam epitaxy; Description of the germanium-implanted samples produced; Analysis of the secondary-ion mass spectrometry measurements of the cobalt depth distribution.
ACCESSION #
7637782

 

Related Articles

  • DSC study of precipitation processes in Cu-Co-Si alloys. Varschavsky, A.; Donoso, E. // Journal of Thermal Analysis & Calorimetry;2003, Vol. 74 Issue 1, p41 

    Using differential scanning calorimetry (DSC) the precipitation processes of supersaturated solid solutions of three Cu-Co-Si alloys containing the same atomic cobalt content were investigated. Thermoanalytical and previous studies, reveal that the decomposition begins with cobalt clustering...

  • Effect of strain and temperature on anomalously large interdiffusion in InAs/InP heterostructures. Tweet, D.J.; Matsuhata, H. // Applied Physics Letters;6/23/1997, Vol. 70 Issue 25, p3410 

    Examines the effect of strain and temperature on anomalously large interdiffusion in indium arsenide and indium phosphide (InP) heterostructures. Strain-dependent interdiffusion in InAS[sub 1-x]P[sub x] layers grown on InP(001) substrates by vapor phase epitaxy; Sensitivity of interdiffusion on...

  • Evaluation of Compositional Intermixing at Interfaces in Si(Ge)/Si[sub 1 – ][sub x]Ge[sub x] Heteroepitaxial Structures Grown by Molecular Beam Epitaxy with Combined Sources of Si and GeH[sub 4]. Orlov, L. K.; Ivina, N. L.; Potapov, A. V. // Semiconductors;Oct2000, Vol. 34 Issue 10, p1103 

    The main causes of the diffusion spreading of a solid-solution composition near the boundaries of the Si transport channel in a Si/Si[sub 1 – ][sub x]Ge[sub x] heterostructure grown by molecular-beam epitaxy combined with solid (Si) and gaseous (GeH[sub 4]) sources are considered. For the...

  • Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection. De Salvador, D.; Coati, A.; Napolitani, E.; Berti, M.; Drigo, A.V.; Carroll, M.S.; Sturm, J.C.; Stangl, J.; Bauer, G.; Lazzarini, L. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 6, p667 

    In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nmthick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N[sub 2]) or oxidizing (O[sub 2]) ambient at 850 °C for times ranging from 2 to...

  • Precipitation of arsenic diffused into silicon from a TiSi2 source. La Via, F.; Privitera, V.; Lombardo, S.; Spinella, C.; Raineri, V.; Rimini, E.; Baeri, P.; Ferla, G. // Journal of Applied Physics;1/15/1991, Vol. 69 Issue 2, p726 

    Determines the precipitation of arsenic diffused into silicon from a TiSi[sub2] source. Amount of diffused arsenic atoms measured by Rutherford backscattering spectrometry; Formation of shallow silicided junctions.

  • Experimental investigation and simulation of Sb diffusion in Si. Solmi, S.; Baruffaldi, F.; Derdour, M. // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p697 

    Investigates the diffusion and precipitation of antimony implanted in silicon. Method used to analyze the influence of nucleation on precipitation kinetics; Occurrence of liquid-phase epitaxial regrowth after laser annealing; Comparison between simulations and experimental results.

  • Effect of Fe and Si impurities on the precipitation kinetics of the GPB zones in the Al-3wt%Cu-1wt%Mg alloy. Chaieb, Zoubir; Ouarda, Ould Mohamed; Raho, Azzeddine Abderrahmane; Kadi-Hanifi, Mouhyddine // AIMS Materials Science;2016, Vol. 3 Issue 4, p1443 

    The formation of the Guinier-Preston-Bagaryatsky zones in Al-Cu-Mg, controlled by the solute atoms diffusion, occurs through a nucleation, growth and coarsening phenomenon. Both growth and coarsening regime are well described, respectively, by the JMAK model of growth and the LSW theory. In the...

  • CeO and CoO-CeO nanoparticles: effect of the synthesis method on the structure and catalytic properties in COPrOx and methanation reactions. Peiretti, Leonardo; Navascués, Nuria; Tiscornia, Inés; Miró, Eduardo // Journal of Materials Science;Apr2016, Vol. 51 Issue 8, p3989 

    CeO and CoO-CeO nanoparticles were synthesized, thoroughly characterized, and evaluated in the COPrOx reaction. The CeO nanoparticles were synthesized by the diffusion-controlled precipitation method with ethylene glycol. A notably higher yield was obtained when HO was used in the synthesis...

  • X-ray reflectometry study of interdiffusion in Si/Ge heterostructures. Baribeau, J.-M. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p3805 

    Presents a study which investigated the interdiffusion in molecular-beam-epitaxy-grown silicon-germanium heterostructures by grazing incidence x-ray reflectometry. Details on the production of the epitaxial layers; Behavior of thick Si/Si[sub1-subx]Ge[subx] superlattices; Angular intensity...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics