TITLE

Theory for a quantum modulated transistor

AUTHOR(S)
Sols, Fernando; Macucci, M.; Ravaioli, U.; Hess, Karl
PUB. DATE
October 1989
SOURCE
Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3892
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents a study that discussed a semiconductor T-structures which may exhibit transistor action based quantum interference. Computation of the electron transmission and reflection coefficients using Green's function technique; Information on optimum conditions for modulation by quantum interference; Details on general considerations concerning device application.
ACCESSION #
7637546

 

Related Articles

  • Quantum size effects on CdTe[sub x]S[sub 1-x] semiconductor-doped glass. Neto, J.A. Medeiros; Barbosa, L.C.; Cesar, C.L.; Alves, O.L.; Galembeck, F. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2715 

    Examines the quantum-confined effects on CdTe[sub x]S[sub 1-x] semiconductor-doped glasses. Influence of heat treatment time and temperature on the microcrystallite sizes; Use of transmission electron microscopy; Average diameter of microcrystallites.

  • Nonlinear quantum capacitance.  // Applied Physics Letters;5/10/1999, Vol. 74 Issue 19, p2887 

    Studies nonlinear quantum capacitance of nanoscale conductors. Finite density of states of the conductors; Expression for the electrochemical capacitance-voltage curve for a parallel plate system.

  • Enhancement of photoluminescence quantum efficiency in semiconductor structures with reduced.... Efros, Al. L.; Prigodin, V.N. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p3013 

    Examines the photoluminescence quantum efficiency (QE) of disordered semiconductors. Dependence of QE on temperature-energy spread ratio; Factors attributing the reduction of nonradiative center recombination rate; Ways to increase the QE of silicon-based structures.

  • Invariant Relation in the Problem of Size Quantization in a Self-Consistent Potential Near the Semiconductor Boundary. Dorozhkin, S. I. // JETP Letters;5/10/2002, Vol. 75 Issue 9, p479 

    The invariant relation in the eigenvalue problem is found for a one-dimensional nonlinear integrodifferential operator acting on the normalized eigenfunctions. The invariance of the obtained relationship follows, in particular, from the fact that it is independent of the detailed form of the...

  • New theory of linewidths of radiative transitions due to disordering in semiconductor alloys. Lee, S.M.; Bajaj, K.K. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p853 

    Describes a quantum mechanical formalism of the excitonic linewidth due to alloy disordering. Application of the formalism to aluminum gallium arsenide semiconductor alloys; Use of the first-order perturbation theory in the calculations; Presentation of excitonic linewidth in Al[sub x]Ga[sub...

  • Computation of quantum mechanical transmission probability from plane interfaces using electronic band structures. Lee, E. Y.; Schowalter, L. J. // Journal of Applied Physics;6/15/1989, Vol. 65 Issue 12, p4903 

    Focuses on a study that presented a method for computing the quantum mechanical transmission probability from plane interfaces. Information on the wannier effective wave equation; Discussion of the wave function at the interface; Transmission across the metal-semiconductor interface.

  • Direct detection of the magnetic flux noise from moving vortices in wide YBa[sub 2]Cu[sub 3]O[sub 7-δ] grain boundary junctions. Hirano, S.; Oyama, H.; Kuriki, S.; Morooka, T.; Nakayama, S. // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1715 

    We measured the flux of a wide bicrystal grain boundary of YBa[sub 2]Cu[sub 3]O[sub 7-δ] film, cooled to 77 K in a field of 10 μT, using a superconducting thin-film coil and Nb-based superconducting quantum interference device (SQUID). When the applied field was changed to, and above, a...

  • On the possibility of transistor action based on quantum interference phenomena. Sols, Fernando; Macucci, M.; Ravaioli, U.; Hess, Karl // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p350 

    A theoretical study of quantum interference phenomena in a T-shaped semiconductor structure is presented. Transmission and reflection coefficients are computed by use of a tight-binding Green function technique. As expected, the results resemble the well-known solutions for the electromagnetic...

  • Negative resistance of semiconductor heterojunction diodes owing to transmission resonance. Zohta, Yasuhito // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2334 

    Presents a study which analyzed the influence of the quantum mechanical reflection on current-voltage characteristics for small semiconductor heterojunction diodes including a potential barrier. Formula for the calculation of the transmission coefficient; Energy band diagram of a potential...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics