TITLE

Growth and modeling of highly doped, thin-layer silicon-modulation-doped superlattices by intermittent solid-phase epitaxy

AUTHOR(S)
Ahlers, E. D.; Allen, F. G.
PUB. DATE
October 1987
SOURCE
Journal of Applied Physics;10/15/1987, Vol. 62 Issue 8, p3190
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the growth of silicon superlattices by molecular-beam epitaxy (MBE) with doping profiles for measuring photoluminescence spectra. Use of a Varian ultrahigh-vacuum chamber; Amorphous deposition and solid-phase epitaxial growth; Application to MBE growth of n-i-p-i superlattices.
ACCESSION #
7637426

 

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