Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films

Ahn, S. T.; Kennel, H. W.; Plummer, J. D.; Tiller, W. A.
November 1988
Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p4914
Academic Journal
Focuses on a study which investigated the effects of stress in silicon nitride films, deposited by the low-pressure chemical vapor deposition process, on the point defect concentrations in silicon. Correlation between the magnitude of stress and reactant gases; Effect of nitride thickness; Change in the average stacking fault sizes.


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