Measurement of a long diffusion length in a GaAs film improved by metalorganic-chemical-vapor-deposition source purifications

Partain, L. D.; Cohen, M. J.; Cape, J. A.; Fraas, L. M.; McLeod, P. S.; Dean, C. S.; Ransom, R. A.
November 1985
Journal of Applied Physics;11/15/1985, Vol. 58 Issue 10, p3784
Academic Journal
Presents a study which measured the electron diffusion length of gallium arsenide epitaxial films improved by vacuum metalorganic-chemical-vapor-deposition process. Experimental details; Results and discussion; Conclusions.


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