Modeling growth of Si1-xGex epitaxial films from disilane and germane

Malik, Rajeev; Gulari, Erdogan; Li, Shin Hwa; Bhattacharya, Pallab K.
May 1993
Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p5193
Academic Journal
Develops a Langmuir-Hinshelwood-type kinetic model for modeling growth of silicon-germanium alloys from disilane and germane on silicon substrates. Experimental dependence of the growth rate on temperature; Discussion of deposition pressure and gas phase hydrogen; Linear relationship between the GeH[sub4] flow rate and percentage germanium incorporation at 610 degree centigrade.


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