TITLE

Modeling growth of Si1-xGex epitaxial films from disilane and germane

AUTHOR(S)
Malik, Rajeev; Gulari, Erdogan; Li, Shin Hwa; Bhattacharya, Pallab K.
PUB. DATE
May 1993
SOURCE
Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p5193
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Develops a Langmuir-Hinshelwood-type kinetic model for modeling growth of silicon-germanium alloys from disilane and germane on silicon substrates. Experimental dependence of the growth rate on temperature; Discussion of deposition pressure and gas phase hydrogen; Linear relationship between the GeH[sub4] flow rate and percentage germanium incorporation at 610 degree centigrade.
ACCESSION #
7635239

 

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