Reduction of crystalline disorder in molecular beam epitaxy GaAs on Si by MeV ion implantation and subsequent annealing

Xiao, Guangming; Yin, Shiduan; Zhang, Jingping; Dong, Aihua; Zhu, Peiran; Liu, Jiarui
May 1992
Journal of Applied Physics;5/15/1992, Vol. 71 Issue 10, p4843
Academic Journal
Presents information on a study which analyzed crystalline quality by using Rutherford backscattering (RBS)/channeling technique and Raman scattering spectrometry, in molecular beam epitaxy gallium arsenide films on silicon (Si) and implanted with Si ions. Dose dependence of the regrowth; Crystalline quality of the recrystallized layers; Results of RBS/channeling measurements; Energy dependence of the recrystallization.


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