Molecular orientation of vacuum-deposited thin films of zincnaphthalocyanine

Yanagi, Hisao; Kouzeki, Takashi; Ashida, Michio; Noguchi, Toru; Manivannan, Ayyakkannu; Hashimoto, Kazuhito; Fujishima, Akira
May 1992
Journal of Applied Physics;5/15/1992, Vol. 71 Issue 10, p5146
Academic Journal
Deals with a study which investigated crystal growth and molecular orientation of naphthalocyanines using zinc 2,3-naphthalocyanine in vacuum-deposited thin films on several substrates. Experimental details; Results and discussion; Conclusion.


Related Articles

  • Growth dynamics of a single-component crystalline thin film. Dubrovskiı, V. G.; Cirlin, G. É. // Technical Physics;Nov97, Vol. 42 Issue 11, p1365 

    Studies the growth dynamics of a single-component crystalline thin films. Optimization of the technological conditions of epitaxial growth; Characteristics of the film surface; Effect of the absence of desorption and migration.

  • Growth and magnetic characterization of face centered cubic Co on (001) diamond. Wolf, J.A.; Krebs, J.J. // Applied Physics Letters;8/22/1994, Vol. 65 Issue 8, p1057 

    Details the growth and characterization of face centered cubic (fcc) Co epitaxial films on diamond. Performance of the growth under ultrahigh vacuum conditions; Demonstration of the single crystal fcc growth throughout the entire sample; Anisotropy yielded by ferromagnetic resonance measurements.

  • Thickness dependence of surface roughness and transport properties of La[sub 2/3]Ca[sub 1/3]MnO[sub 3] epitaxial thin films. Bibes, M.; Balcells, Ll.; Valencia, S.; Sena, S.; Martínez, B.; Fontcuberta, J.; Nadolski, S.; Wojcik, M.; Jedryka, E. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p6686 

    In this work, we report on the impact of distinct growth parameters that affect the roughness and surface morphology of La[sub 2/3]Ca[sub 1/3]MnO[sub 3] epitaxial thin films grown by rf sputtering, namely, the film thickness and the deposition temperature. Data for films with thicknesses ranging...

  • Single-crystal growth of Nb films onto molecular beam epitaxy grown (001)InAs. Akazaki, Tatsushi; Nitta, Junsaku; Takayanagi, Hideaki // Applied Physics Letters;10/14/1991, Vol. 59 Issue 16, p2037 

    Examines the single-crystal growth of Nb films onto molecular beam epitaxy grown (001)InAs. Features of the interface between Nb and InAs; Presentation of the critical current measurement of Nb/InAs/Nb junctions; Effect of the crystal-disordered layer on the junctions.

  • Mechanism of organization of three-dimensional islands in SiGe/Si multilayers. Mateeva, E.; Sutter, P. // Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3233 

    Investigates the organization of three-dimensional islands during the growth of SiGe/Si multilayers on Si(200). Use of cross-sectional transmission electron microscopy in the study; Role of the merging of islands of different initial size in the uniform size distribution; Observation of a...

  • Simulations of high-rate diamond synthesis: Methyl as growth species. Goodwin, D.G. // Applied Physics Letters;7/15/1991, Vol. 59 Issue 3, p277 

    Focuses on the numerical simulations of two high-rate polycrystalline diamond film growth environments. Use of methyl growth mechanism in growth rate calculation; Abundance of methyl at the surface; Importance of hydrogen surface consumption in diamond growth.

  • Response to 'Comment on 'Crystal growth of C[sub 60] thin films on layered substrates'' [Appl.... Tanigaki, Katsumi; Kuroshima, Sadanori // Applied Physics Letters;7/18/1994, Vol. 65 Issue 3, p379 

    Answers the comment on the crystal growth of fullerene thin films on layered substrates. Conditions for thin film crystal growth; Application of reflection high-energy electron diffraction measurement; Use of quartz crystal oscillator to monitor film thickness.

  • Miscut-angle dependence of perpendicular magnetic anisotropy in thin epitaxial CoPt[sub 3] films grown on vicinal MgO. Maranville, B. B.; Shapiro, A. L.; Hellman, F.; Schaadt, D. M.; Yu, E. T. // Applied Physics Letters;7/15/2002, Vol. 81 Issue 3, p517 

    The effect of vicinal substrates on the growth-induced perpendicular magnetic anisotropy of epitaxial CoPt[sub 3] films has been studied. A small (2°, 4°, or 10°) miscut angle of the vicinal substrate causes the crystallographic axes of the sample to be tilted along the miscut...

  • A model for crystal growth during metal induced lateral crystallization of amorphous silicon. Joshi, Amol R.; Krishnamohan, Tejas; Saraswat, Krishna C. // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p175 

    In this work a model has been proposed to predict crystal growth with metal induced lateral crystallization (MILC) of thin films of amorphous silicon (α-Si). Previous work by different groups using nickel for MILC reports crystal growth rate increasing as well as decreasing with time. Based...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics