TITLE

Assessment of n-type GaAs by the Hall effect

AUTHOR(S)
Leitch, A. W. R.
PUB. DATE
March 1989
SOURCE
Journal of Applied Physics;3/15/1989, Vol. 65 Issue 6, p2357
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the use of Hall measurements in obtaining the donor and acceptor concentrations in n-type gallium arsenide samples. Background of the concept of the Hall effect; Effect of the onset of impurity conduction at low temperatures on the determination of the impurity concentrations in the material; Variation of Hall mobilities with temperature.
ACCESSION #
7633887

 

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