TITLE

Midgap states in a-Si:H and a-SiGe:H p-i-n solar cells and Schottky junctions by capacitance techniques

AUTHOR(S)
Hegedus, Steven S.; Fagen, E. A.
PUB. DATE
June 1992
SOURCE
Journal of Applied Physics;6/15/1992, Vol. 71 Issue 12, p5941
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Provides information on a study which investigated the midgap density of states in a-silicon:hydrogen and a-silicon germanium:hydrogen p-i-n solar cells and Schottky junctions by capacitance techniques. Sample fabrication and measurements; Theory of capacitance due to midgap states; Methodology.
ACCESSION #
7633520

 

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