Model potential calculation of the thermal donor energy spectrum in silicon

Chen, C. S.; Schroder, D. K.
June 1988
Journal of Applied Physics;6/15/1988, Vol. 63 Issue 12, p5761
Academic Journal
Focuses on a study which extended a two-parameter model potential for calculating the ground-state energies of group V and group VI impurities in silicon to the variational calculation of the thermal donor ionization energies. Methodology of the study; Comparison of theoretical results with the experimental data; Implications for prior study on the range of oxygen atoms in thermal donors.


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