Electron distribution in pseudomorphic Al0.30Ga0.70As/ In0.15Ga0.85As/GaAs δ-doped heterostructures

Fernández, J. M.; Lazzouni, M. E.; Sham, L. J.; Wieder, H. H.
July 1993
Journal of Applied Physics;7/15/1993, Vol. 74 Issue 2, p1161
Academic Journal
Presents a study that investigated the electronic properties of a σ-modulation-doped pseudomorphic heterojunction. Experimental details; Results; Discussion.


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