TITLE

The chemical interaction between high-concentration, mixed-ion-implanted group-III and -V impurities in silicon

AUTHOR(S)
Shiryaev, S. Yu.; Nylandsted Larsen, A.; Deicher, M.
PUB. DATE
July 1992
SOURCE
Journal of Applied Physics;7/15/1992, Vol. 72 Issue 2, p410
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Presents information on a study which analyzed high-concentration, mixed group-III (indium, gallium)/group-V (phosphorus, arsenic)-implanted silicon single crystals. Discussion of solid phase epitaxy and impurity redistribution; Structural characterization of the regrown layers; Thermal stability of phases in the regrown layers.
ACCESSION #
7632310

 

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